"Fosfor Gadgets" - 5 new articles
iPod video?
Movie Downloads: 99% chance Apple’s Showtime: The Odds on New Hardware Tomorrow [Gizmodo.com]
Mini bluetooth keyboard
Mini bluetooth keyboard [shop.brando.com.hk]
Sony DSC-N2
Press information from Sony: Sony DSC-N2 The elegant DSC-N2 camera debuts in champagne gold and is a ten-megapixel powerhouse with an extending Carl Zeiss(R) Vario Tessar(R) 3x optical zoom lens. With its built-in photo album function, this model can be a photo diary in your pocket, loaded with up to 500 of your favorite images.
Every time you snap a picture, the DSC-N2 model will store a full-resolution image on the optional media card or in the camera’s 25 MB of internal memory. Additionally, it automatically resizes that same image in VGA resolution and stores it in a portion of the camera’s internal memory dedicated to pocket album. No matter how many pictures are offloaded from the media card, you can choose to protect the images you want to keep and, over time, you have a collection of your favorite shots in the camera. The DSC-N2 model also hits stores in October for about $450. Optional accessories include the MPK-NA marine pack for about $200, NP-FT1 InfoLithium(R) battery for about $50, and LCS-NA leather carrying case for about $50.
Sony DSC-T50
Press information from Sony: The ultra-slim and stylish DSC-T50 model is the new top-of-the-line
The Cyber-shot DSC-T50 camera offers Super SteadyShot(R) optical image
The Cyber-shot DSC-T50 camera ships in October for about $500. Optional
64 GB compact flash from Samsung
Full Press release from Samsung: SAMSUNG Announces First 40-nanometer Device — 32 Gb NAND Flash with Revolutionary Charge Trap Technology Seoul,Korea - September 11, 2006: Samsung Electronics Co., Ltd., the world leader in advanced semiconductor technology solutions, today announced that it has developed the industry’s first 40-nanometer (nm) memory device. The new 32 Gigabit (Gb) NAND flash device is the first memory to incorporate a Charge Trap Flash (CTF) architecture, a revolutionary new approach to further increase manufacturing efficiency while greatly improving performance. The new CTF-based NAND flash memory increases the reliability of the memory by sharply reducing inter-cell noise levels. Its surprisingly simple structure also enables higher scalability which will eventually improve manufacturing process technology from 40 nm to 30 and even 20nm. In each 32Gb device, the control gate in the CTF is only 20 percent as large as a conventional control gate in a typical floating gate structure. With CTF, there is no floating gate. Instead, the data is temporarily placed in a “holding chamber” of the non-conductive layer of the flash memory composed of silicon nitride (SiN). This results in a higher level of reliability and better control of the storage current. The 32Gb NAND flash memory can be used in memory cards with densities of up to 64-Gigabytes (GBs). One 64GB card can store over 64 hours of DVD resolution movies (40 movies) or 16,000 MP3 music files (1,340 hours). The CTF design is enabled through the use of a TANOS structure comprised of tantalum (metal), aluminum oxide (high k material), nitride, oxide and silicon. The use of a TANOS structure marks the first application of a metal layer coupled with a high k material to the NAND device. The TANOS CTF architecture, which serves as the foundation of the 40nm
32Gb CTF NAND flash announced today, was developed after extensive
research of the Samsung Semiconductor R&D department. Samsung first
revealed the TANOS structure through a paper at the 2003 International
Electron Devices Meeting (IEDM). Introduction of a 40nm manufacturing process for 32Gb NAND flash marks the seventh generation of NAND flash that follows the New Memory Growth Theory of double-density growth every 12 months, which was first presented by Dr. Chang Gyu Hwang, president and CEO of Samsung Electronics’ Semiconductor Business in a keynote address at ISSCC 2002.
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